A Pad-Oriented Novel Electrostatic Discharge Protection Structure For Mixed-Signal ICs
نویسندگان
چکیده
This paper reports a design of a bonding pad oriented square-shape ESD (electrostatic discharge) protection structure. The novel ESD protection structure provides adequate protection for IC chips against ESD pulses in all directions. The structure features deep snapback symmetric characteristics, low discharging impedance, low holding voltage, and flexible triggering voltage. It passed 14KV HBM zapping and 15KV air gap IEC stressing. The pad-oriented design substantially reduces Si area consumed by ESD structures on a chip, therefore generates less parasitic effects that degrade IC performance. The new design is especially suitable for very deep sub-micron (VDSM) mixed-signal and RF IC applications.
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